Threshold behaviour of human axons explored using subthreshold perturbations to membrane potential

Biophysical determinants of the behaviour of human myelinated axons

Characterization of voltage-gated K+ currents contributing to subthreshold membrane potential oscillations in hippocampal CA1 interneurons.

CA1 inhibitory interneurons at the stratum lacunosum-moleculare and radiatum junction (LM/RAD-INs) display subthreshold membrane potential oscillations (MPOs) involving voltage-dependent Na(+) and A-type K(+) currents. LM/RAD-INs also express other voltage-gated K(+) currents, although their properties and role in MPOs remain unclear. Here, we characterized these voltage-gated K(+) currents and...

Shot noise behaviour of subthreshold MOS transistors

2014 It is shown that assuming weak inversion, low drain current asymptotic value of the gate equivalent noise resistor is given by n2/2 UT/ID, corresponding to shot noise. Measurements confirming this theory as well as flicker noise measurements on n and p channel transistors integrated with either bulk or SOS CMOS silicon gate technology are presented. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉC...

Spinal nerve injury enhances subthreshold membrane potential oscillations in DRG neurons: relation to neuropathic pain.

Primary sensory neurons with myelinated axons were examined in vitro in excised whole lumbar dorsal root ganglia (DRGs) taken from adult rats up to 9 days after tight ligation and transection of the L(5) spinal nerve (Chung model of neuropathic pain). Properties of subthreshold membrane potential oscillations, and of repetitive spike discharge, were examined. About 5% of the DRG neurons sampled...

Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs

Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are pr...